Skip to content

Charge carrier lifetime based on Shockley-Read-Hall and Auger recombination

This MR implements charge carrier lifetimes based on the Shockley-Read-Hall (e.g. 10.1016/0038-1101(76)90022-8) and Auger (e.g. https://doi.org/10.1063/1.89694) recombination models. Both models are highly doping dependent. Therefore, a DopingProfileReader module was added as well.

The implementation is still very preliminary. The following steps need to be considered:

  • Updating READMEs
  • Removing unnecessary parameters in the code
  • Testing the code with different doping profile inputs (e.g. constant, TCAD mesh,...)
  • Fixing formatting and comments in code

If you already have questions/suggestions/wishes/comments, please feel free to state them. Please note that there might still be major bugs in the code that I will (hopefully) fix once I'm done with the To-Do list above.

There is one open question to be discussed: Strictly speaking, the Auger model only applies to the minority charge carriers. Any suggestions how this should be handled? Should we leave it to the user to state in the TransientPropagationModel for which carrier type they want the Auger model to be applied? To me, this seems to be the easiest but not the most elegant solution. Any other suggestions?

Edited by Katharina Dort

Merge request reports