Updates of SCT_InducedChargeModel and SCT_SurfaceChargeGenerator

SCT_InducedChargeModel

• Rename SCT_InducedChargedModel to SCT_InducedChargeModel.
• Calculate Lorentz angle following SiLorentzAngleSvc.
• Define constructor and call loadICMParameters method in it.
• Change init method to setWaferParameters method and return SCT_InducedChargeModelData.
• SCT_InducedChargeModelData holds wafer dependent data.
  • m_EFieldModel exists in both SCT_InducedChargeModel and SCT_InducedChargeModelData because FEM may be switched to FDM if depletion voltage is out of range.
• Make methods const using SCT_InducedChargeModelData.
  • As preparation for AthenaMT in release 22
• Add cache of SCT_InducedChargeModelData to avoid the same calculation for every call.
• Change EFiled method to getEField method.
• Change m_PotentialValue to hold multiple sets (FEM and FDM)
• Define getFEMIndex method to get s_VFD0 index and check out of range of s_VFD0.
• Move some funtionalities of loadICMParameters to new setEField method.
• Chage order of EFieldModel enums for efficient memory usage.
• Make msgLvl method const
• Use std::array instead of C array.
• Add more comments.

SCT_SurfaceChargeGenerator

• SCT_SurfaceChargesGenerator::processSiHit calls SCT_InducedChargeModel::setWaferParameters.
  • Otherwise correct voltage values cannot be obtained.
  • m_depletionVoltage/CLHEP::volt and m_biasVoltage/CLHEP::volt are used instead of m_vdepl and m_bias.

I ran the Reco_tf.py --AMI q221 command without and with this MR with m_doInducedChargedModel=true to use SCT_InducedChargedModel. Slight differences are expected due to fix of voltages and temperature, and change of position for B field, change of Lorentz angle calculation. h_phiVsNstrips0 plot (cluster size vs incident angle for the innermost Barrel layer) shows only small differences.

• Without this MR: h_phiVsNstrips0_old.pdf
• With this MR: h_phiVsNstrips0_new.pdf

Tag @mtogawa

Manually swept to master by MR !37514 (merged)