Follow-up from "Charge carrier lifetime based on Shockley-Read-Hall and Auger recombination"
The following discussions from !410 (merged) should be addressed:
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@simonspa started a discussion: I guess this will have to be adapted a little - in Projection there only is one step and we only accept doping profiles of type
CONSTANT
since we cannot account for changes on the way - essentially for each charge carrier we calculate a fixed lifetime at the beginning and just check if it will manage to reach the implant or not. -
@simonspa started a discussion: You should probably mention that you extrapolate if outside the defined region.
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@pschutze started a discussion: We could add plots for these. Like a histogram for the number or the fraction of recombined charges per event.
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@pschutze started a discussion: I am not sure how to improve this (or whether it needs improvement, actually), but I'm wondering about whether using the total time here is a good thing. I'm taking it to the extreme with an example:
Imagine a charge carrier that was produced in an undepleted region of the sensor. It diffuses around quite a bit and after, say 50 ns it reaches an electric field. During its drift it passes through a very small region with a low lifetime. It is inside this region for maybe 50 ps, but the time input used to decide whether it survives or not would be 50.something ns.
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@pschutze started a discussion: You use
time
here, butlast_time
for the debug output. Would it make sense to use the same? -
@pschutze started a discussion: Also here the question would be whether this should be more central, like in the manual within Extending the simulation chain? Then one could here refer to this part and stay with the fact that recombination is implemented and which parameter to use.